Impact of Cap Length in InAlAs/InGaAs Based High Electron Mobility Transistor

In this paper, a comparative study of the analog performance of InP-based High Electron Mobility Transistors (HEMTs) is conducted with varying cap lengths in the InAlAs/InGaAs hetero-structure. The study focuses on several key parameters, including ON current, transconductance, output conductance, intrinsic gain, ON-resistance, and ON to OFF current ratio. Our findings reveal that as the cap length increases, there is a noticeable improvement in the overall transistor performance.