Effects of High-k Dielectric Materials on Different Structures of 3D FinFET

In this research work, we have examined the electrical characteristics of Double Gate FinFET (DG FinFET), Tri-Gate FinFET (TG FinFET) and Gate All Around FinFET (GAA FinFET) with 10nm channel lengths for different high-k dielectric materials as gate insulators. The Silvaco TCAD software is used for designing and simulation. The performance parameters taken into consideration for analyzing the FinFETs are threshold voltage, subthreshold swing (SS) and
$\mathrm{I}_{\text{on}}/\mathrm{I}_{\text{off}}$
ratio. From the simulation results, it is evident that gate-all-around FinFET exhibits better device performance among all three structures due to its enhanced electrostatic control over the channel. The high-k dielectric Hafnium oxide (HfO
2
) demonstrates better performance among all materials for gate insulators as it shows better electrical performance. This paper also investigates the electrical characteristics of GAA FinFET for different materials like SiGe and 3C-SiC in the channel region. Comparative analysis from the simulation results showed that 3C-SiC provides 1.3183 times more
$\mathrm{I}_{\text{on}}/\mathrm{I}_{\text{off}}$
ratio and 0.9923 times less subthreshold swing than the Si as channel materials.