Design and development of C-Ku wideband MMIC power amplifier using 250nm GaN HEMT process

This paper presents a wideband MMIC power amplifier design for C-Ku band AESA radar to be used for the purpose of jamming. The MMIC PA has been designed for the frequency range of 5 GHz to 18 GHz and has been fabricated with using 250 nm Gallium Nitride on SiC process of UMS, France. The fabricated power amplifier chip has an output power of $39.2 \pm 0.7$ dBm with small signal gain of $19 \pm 1.5$ dB and power added efficiency of 15%-25%.