High-Efficiency, Broadband Doherty Power Amplifier for 5G Applications

This paper presents a broadband Doherty Power Amplifier (DPA) for 5G applications. The proposed DPA uses high electron mobility transistor (HEMT) Gallium nitride (GaN) based packaged device as an active nonlinear device. DPA uses active load modulation to get high efficiency at back-off power operation. With the simulation results it is observed that the proposed DPA can achieve the highest efficiency of 75.3% at saturation and around 64.3% at 6 dB output back off (OBO) at the center frequency of 3.5 GHz. The achieved bandwidth (BW) is 3.1-3.8 GHz with a gain of more than 8 dB and output power (Pout) of 41.4-44.6 dBm. The proposed DPA can accomplish a wide band characteristic with high efficiency and output power.