High Isolation Ka-band Multi-Port PIN Diode MMIC Switches

AlGaAs/GaAs PIN diode based Ka-band SP4T and SP2T switches are designed and tested, with measured insertion loss less than 2 dB and isolation better than 48 dB over 25-33 GHz band. The on-wafer measured results are in close match with simulations. These MMIC switches are EM simulated using ADS Momentum tool. Combination of series and shunt diode topology is used to get optimum insertion loss and isolation at Ka-band. These chips have on-chip bias networks and DC blocking capacitors and are well suited for realization of miniaturized RF switch matrix at Ka-band.