High Yield Design of an On Chip X-band Power Divider Based on GaAs IPD Technology

This paper proposes high yield design of a compact X band power divider using an optimized inductor on an Integrated Passive Device (IPD) technology on GaAs substrate. Simulation shows that an excellent RF performance can be achieved using only single section of “T” or “Pi” network in a small size of $1.1 \mathrm{~mm} \times 1.1 \mathrm{~mm}$ that is $0.04 \lambda_{0} \times 0.04 \lambda_{0}$ where $\lambda_{0}$ is the free-space wavelength at 10 GHz. The design was optimized considering the process and components tolerances. Yield better than 98%, achieved for return loss performance better than 15 dB, insertion loss of 0.52-0.7dB and isolation better than 15dB over 8 to 12GHz bandwidth.