Design of Ultra Wideband MMIC Reflective Switch

The design, fabrication and testing of a low-loss ultra-broadband SPDT switch using the AlGaAs / InGaAs pHEMT MMIC process are carried out on a test jig. Measurements across the entire band show more than 38 dB of isolation and 2.2 dB of insertion loss. Due to series-shunt architecture, all three ports of this SPDT switch are perfectly matched, with return losses of more than 12 dB up to 20 GHz and 10 dB over the entire operating range. Because the switch works with gate voltages of -3V or -5V and 0V, which guarantees negligible current less than 0.1mA and low current consumption during operation. This SPDT switch has an area of 2mm square. The main features offered are low loss, high isolation, compactness and fast switching speed.