Study of variation in Insertion Loss and Isolation on Indigenous GaN HEMT Switch as a function of Device Geometry

RF switch is an integral part of front end of T/R module. RF characterization plays a critical role in the development of these switches. In the present paper RF characterization and performance analysis of indigenously developed GaN HEMT based RF switch has been discussed. In these switches, GaN HEMT device acts as ON and OFF switch depending upon the DC control voltage applied to the device. Extensive measurement has been carried out over indigenously developed GaN HEMT for different geometry of devices. Variation of performance parameters i.e. Insertion loss and Isolation as a function of device geometry has been analyzed. This extensive analysis of GaN HEMT devices with varying geometries, ascertains the relationship between device geometry and performance.