DC and RF Performance Analysis of Junctionless Gate All Around Nanosheet MOSFET

This article presents an analysis of the DC and RF/analog performance of junctionless gate-all-around nanosheet MOSFET (JL-GAA-NSFET), focusing on the evaluation of short channel effects (SCEs) and RF performance parameters. The findings of the study indicate that the JL-GAA-NSFET shows greater compatibility for low-power applications with smaller gate lengths as it demonstrates better endurance to the SCEs in comparison to the conventional inversion mode nanosheet MOS-FET (IM-GAA-NSFET). The JL-GAA-NSFET demonstrates a significant enhancement in several key performance metrics compared to the IM-GAA-NSFET. Specifically, it exhibits a 30% improvement in drain-induced barrier lowering (DIBL), a 13.5 % improvement in subthreshold swing (SS), a reduction of approximately 7 times in off-state current, an increase of approximately 6 times in the Ion/Ioff ratio, and a substantial decrease of 2×10
²
times in gate-induced drain leakage (GIDL) current. However, in terms of RF performance metrics, JL-GAA-NSFET shows comparatively low transconductance (gm) and cut-off frequency (f
t
). The JL-GAA-NSFET shows a peak gm value of 2.73×10
⁻⁴
S, a f
t
value of 619 GHz, and a TGF value of 96.72 V
⁻¹
, which are about 20%, 42.14% reduction, and a 24% increase, respectively, compared to the IM-GAA-NSFET.