Evaluating Topological Insulator-Based FETs in Circuit-Level Performance with Advanced Device Simulations

In recent years., topological insulators (TIs) have emerged as a promising material class in the realm of advanced electronic devices due to their unique electronic properties. This paper presents a comprehensive evaluation of Field-Effect Transistors (FETs) based on topological insulators through advanced device simulations to understand their potential in circuit-level applications. We have employed state-of-the-art simulation tools to model the behavior of TI-based FETs under various operating conditions and benchmarked their performance against conventional semiconductor-based FETs. Our results indicate that TI-based FETs exhibit superior switching characteristics., reduced leakage currents., and enhanced thermal stability. Furthermore., the inherent spin-momentum locking property of TIs introduces a new dimension in device design., paving the way for spintronic applications. The study also highlights the challenges associated with integrating TI-based FETs in conventional circuits., such as interface quality and material purity. In conclusion., while topological insulator-based FETs hold significant promise for next-generation electronics., meticulous material engineering and device optimization are crucial for their successful integration into mainstream circuitry.