Quantum Transport Simulations in 2D Materials for Enhanced High-Frequency Circuit Performance

Due to their distinct electrical characteristics, two-dimensional (2D) materials have become more attractive as potential candidates for next-generation electronic devices in recent years. This work explores 2D material quantum transport simulations with the goal of revealing their potential to improve high-frequency circuit performance. We extensively study the electron transport features of several 2D materials such as graphene, black phosphorus, and transition metal dichalcogenides (TMDs) by using sophisticated quantum transport models. Based on our calculations, we find that 2D materials may lead to improved device performance at high frequencies by having better electron mobility and less scattering effects under certain circumstances. Moreover, these materials' intrinsic quantum confinement characteristics provide unique quantum interference patterns that may be used to create creative circuit designs. The results of this work not only highlight the potential of 2D materials to transform high-frequency electronics, but they also provide a thorough foundation for incorporating them into electronic systems of the future. New technologies that take use of the quantum phenomena of 2D materials may be developed as a result of this study, which will help meet the growing need for quicker and more efficient electronic devices.