Quasi-two-dimension physic-topological model of field-effect transistors (FETs) in view of the self-heating effect

In field-effect transistors of average and high power the influence of power, pick out in the channel on transistor characteristics is observed. This phenomenon is called the self-heating effect. The quasi-two-dimension physic-topological model of FETs in view of the self-heating effect is offered in the report.