Effects of gate-to-body tunneling current on pass-transistor based PD/SOI CMOS circuits

The gate-to-body tunneling current (I/sub gb/) in PD/SOI devices resulting from the electron tunneling from the valence band has been shown to charge/discharge the floating-body, thus changing the body voltage and V/sub T/ and affecting circuit operations. The authors present a detailed study on the effect of gate-to-body tunneling current on pass-transistor-based PD/SOI CMOS circuits in a 1.2 V, 0.13 /spl mu/m PD/SOI technology with L/sub poly/= 0.075 /spl mu/m, physical t/sub OX/ = 1.5 nm, t/sub Si/ = 120 nm, and t/sub BOX/ = 145 nm.