Design and Implementation of Single Phase GaN Half Bridge Inverter for Photovoltaic System

This paper presents a design and hardware implementation of a gallium nitride (GaN) single-phase inverter to be used in the photovoltaic system instead of a silicom (SI) single-phase inverter. GaN inverters are evaluated in terms of their switching losses, efficiency, and total harmonic distortion. GaN inverters also have a higher switching frequency and faster switching speeds, which can further improve the efficiency of the inverter system. The results show that the GaN inverter has lower switching losses and higher efficiency compared to the Si inverter. The paper concludes that GaN inverters are a promising alternative and have several advantages over silicon (Si) inverters for power conversion.