Characterization of Radiation-Dependent Dual Channel AlGaN/GaN MOS-HEMT Based Dosimeter

We have developed a Double channel MOSHEMT-based dosimeter. This paper presents the performance comparison between double channel HEMT based dosimeter and Double channel MOS-HEMT based dosimeter. Various Parameters such as Channel potential, Electric field, I
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, sensitivity, gate capacitance, and cut-off frequency have been analyzed for both the devices, and the double-channel MOSHEMT devices have good cutoff frequencies. These devices have excellent gain linearity and can function at higher input power and frequency levels. It has been found that the undoped barrier layer benefits Double Channel MOSHEMTs by increasing the drain current, widening the transconductance peak, and raising the threshold voltage. The presence of well-defined double-channel behaviour is well demonstrated by the formation of a double-hump structure in the dependency of and on gate bias. The effect of radiation dose $\left(\mathrm{N}_{\mathrm{t}}=2 \times 10^{12} \mathrm{~cm}^{-2}\right)$ has been studied. Maximum channel potential, Electric field, cut-off frequency and maximum current observed for the DC-MOS HEMT-based dosimeter device are 1.6059 V, 1.33E+05 V/cm, 1.89E+10, 0.069. Due to the extra oxide layer under the gate electrode, the DC-MOSHEMT-based dosimeter exhibits better results than the DC-HEMT-based dosimeter.