Reduction of Subthreshold Leakage Using Metal Strip in SGO Double-Gate MOSFET

This paper investigates and compares the reduction of subthreshold leakage current ISUB in the stack-gate-oxide double-gate metal-oxide-semiconductor field-effect transistor (SGO-DG-MOSFET) and stack-gate-oxide low work function live-strip double gate MOSFET (SGO-LWLS-DG-MOSFET). A comparative discussion is carried out in the simulation results using the technology computer-aided design (TCAD) tool. Reduction in ISUB of $10^{-3}\mathrm{A}/\mu \mathrm{m}$ is observed in SGO-LWLS-DG-MOSFET compared to SGO-DG-MOSFET. However, 11.23% enhancement is noticed in the transconductance $\mathrm{g}_{\mathrm{m}}$ of SGO-LWLS-DG-MOSFET. Due to the low ISUB, SGO-LWLS-DG-MOSFET exhibits a considerable improvement in the switching ratio as well.