Optimization of DMGC CGAA FET Under Heavy Ion Irradiation Environment: A Reliability Analysis

Nanodevices, with their unparalleled capabilities and small size, have shown great promise in advancing technology. However, as technology continues to push the limits of miniaturization, the susceptibility of nanodevices to radiation becomes a critical concern. Heavy ion irradiation, a form of radiation exposure involving energetic ions, has gained attention due to its potential impact on nanodevice performance. In this article, we explore the effects of heavy ion irradiation on DMGC (dual material graded channel) CGAA (cylindrical gate all around) FET. Heavy ion impact on device performance is studied at various locations, incident angles, and ion track radii. Bipolar amplification is explained, along with the tendencies of the transient current peak and the collected charge. According to the findings, radiation is highly detrimental to the drain channel junction. In addition, changing the inclination angle from 60
⁰
to 10
⁰
increases the collected charge by 15.6%. There is a significant effect on the acquired charge, by narrowing the ion track radial area. Furthermore, the relation between bipolar amplification and LET is studied. The results underlined the importance of taking radiation into account during the design phase of DMGC CGAA FET for radiation-sensitive applications.