Electro-thermal analysis of Phase Change Memory Devices for Synaptic Applications

In this work, we present the impact of electro-thermal analysis on Phase change memory (PCM) devices to mimic the bio-inspired neuron-synaptic applications, particularly crucial for implementing neuromorphic devices. A 2-D finite element simulation with axis symmetry is employed to analyze the electro-thermal effect on the PCM device using Ge
2
Sb
2
Te
5
(GST) as a phase change material. The thermoelectric effects at the inside GST are calculated using the material with temperature-dependent features. A substantial increase in temperature profile (548.7K-1294.8K) within the GST is achieved with RESET pulses varying from (2V-4V). Hence, the formation of the amorphous cap thickness (A
T
), an utmost desire to achieve the change in conductance inside the device, is suitable to emulate the biological brain. There is a 26% increase in A
T
realized with the applications of consecutive voltage pulses, while a ~20% decrease in conductance value is witnessed in response to the growth of A
T
.