A Reliability Assessment of Junctionless (JL) Nanosheet (NS) FET under Heavy Ion Irradiation Conditions

The exponential growth in the electronic industry and its impact on other fields are merely due to advancement nanoscale devices. The Nanosheet (NS) FET is a mutigate device structure and it is a widely adopted in sub-7 nm technology node due to superior electrostatic integrity and ease of scaling. The radiation analysis of NSFET at lower technology node need to be investigated properly to use them in radiation sensitive applications. This article analyzes the performance junctionless (JL) NSFET under Heavy-ion irradiation conditions. We have adopted well calibrated TCAD tool to assess the performance of two sheet JL NSFET by varying the incident locations, angle and track radii of Heavy ion. The transient peak current and charges are extracted and analyzed with aforementioned parameters. As the location of incidence of Heavy ion is moving away from the channel-drain interface, NSFET is less detrimental to radiation. Similarly, the angle of incidence is also playing a vital role in radiation analysis, its impact is less at lower angles (0° and 10°). With increase in radii of Heavy-ion, device is more vulnerable to radiation. The results reveal that, the radiation analysis is essential before design the circuits and systems in radiation prone environment.