ON- and OFF-State Performance of Normally-OFF β-(AlxGa1-x)2O3/Ga2O3 MODFETs with p-GaN Gate

This article presents a systematic investigation into the impact of different device parameters on the performance of normally-OFF β-(Al
x
Ga
1-x
)
2
O
3
/Ga
2
O
3
modulation doped field-effect transistors (MODFETs) with p-GaN gate. The analysis examines the performance of this heterostructure device in both the ON-state and OFF-state. Special emphasis is given on evaluating the ON-resistance, threshold voltage, driving capability, OFF-state breakdown voltage, and power figure of merit (PFOM) of the device. For this purpose, a well-calibrated TCAD simulation tool is used. The findings of this study offer valuable insights into the design of high-power Ga
2
O
3
-based MODFETs, and can also serve as a useful reference for future development in β-(Al
x
Ga
1-x
)
2
O
3
/Ga
2
O
3
MODFET technology.