Design of a Compact Q-band Low Noise Amplifier in 0.15-μm GaAs pHEMT Process

This paper presents a Q-band LNA using 0.15-μm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process. With source degeneration and RC-feedback technique, the proposed Q-band LNA achieves a peak small-signal gain of 20.7 dB, 2.8-4.1dB noise figure and a power consumption of 31mW at 1-V drain voltage from 27 to 50 GHz.