Ka-band High Efficiency 16W/24W GaN Power Amplifier MMICs for a W-band GaN Transmitter Module with a Triple-Multiplier for Beyond 5G

This paper presents the design and measurement of a Ka-band high efficiency 16W/24WGaN power amplifier (PA) microwave monolithic integrated circuits (MMICs) utilizing a 0.15 $\mu$m GaN HEMT process technology for W-band GaN transmitter module with a triple-multiplier for beyond 5G. Under continuous wave measurements for the 16 W PA (MMICI) demonstrate 16. 2-16.9W of output power and 2S-29.4% of peak power-added efficiency (PAE) over 31-35 GHz bandwidth. Measured results for 24 W PA (MMIC2), which was combined of two MMICIs over a similar frequency range indicate output power and peak PAE of 24. 5-26.3W and 23-24.6% respectively. Additionally, an adjacent channel power ratio less than −28 dBc has been achieved under 5G NR signal with 400 MHz modulated bandwidth over 32-35 GHz band.