Active and Passive Integrated Filters for Multi-GHz 6G Baseband Applications

This paper presents the design and comparison of an active $\mathrm{G}_{\mathrm{m}}-\mathrm{C}$ and a passive baseband filter for 6G applications. Both presented circuits are 5
^th
-order differential low-pass filters with 3-dB cut-off frequencies of 4.9 and 4.7 GHz, respectively, implemented in a 22 nm FD-SOI CMOS technology. The active filter uses back-gate tuning to optimize the transfer function, and achieves a measured in-band IIP3 between −1.0 and $-9.1 \mathrm{dBV}_{\mathrm{p}}$, out-of-band IIP3 between 1.0 and $15 \mathrm{dBV}_{p}$, and input-referred noise of $6.55 \mathrm{nV} / \sqrt{\mathrm{Hz}}$, while consuming 19.9 mW from a 0.8 V supply and occupying $0.05 \mathrm{~mm}^{2}$ core chip area. By utilizing mutual inductance, the footprint of the passive filter is minimized, occupying only $0.07 \mathrm{~mm}^{2}$.