New MEGA POWER DUAL/spl trade/ IGBT module with advanced 1200 V CSTBT chip

A new 1400 A/1200 V MEGA POWER DUAL/spl trade/ IGBT module has been developed for high power industrial applications. The new module incorporates the latest advances in chip technology to produce a device with the rugged safe operating area and low losses required in high power industrial applications. The new power chip is based on an optimized wide cell pitch carrier stored trench bipolar transistor (CSTBT). The module features an optimized high current dual (half bridge) package with low parasitic inductance and integrated features designed to allow simplified assembly of high power inverters.