Design and Analysis of Vertical Channel Dual Gate Organic Thin Film Transistor

Organic electronics offer promising prospects for flexible device markets and affordable electronic solutions, especially in developing countries with robust performance. This study delves into the architecture of organic thin film transistors (OTFTs), conducting a comparative analysis of the important performance metrics, such as output drain current, subthreshold slope, and threshold voltage etc., in determining overall device efficiency. The research highlights the better performance of Dual Gate (DG) OTFTs compared to single gate OTFTs, providing almost double the output drain current for same operational voltage. The paper also discusses challenges like increased size and contamination issues associated with DG OTFTs. To address the limitations of DG OTFT and to enhance the OTFT performance, a new OTFT structure with short vertical channel and multiple gates has been proposed. The paper identifies the necessity for a vertical channel dual-gate organic thin film transistor capable of generating significantly higher drain current compared to its conventional counterparts, indicating a crucial direction for future research and development in the field of organic electronics.