Enhancing Reliability of Short-Channel Dual Gate InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering

Previous studies have reported the formation of n+ regions in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) upon doping hydrogen (H) to the AOS channel layer from the deposition atmosphere of interlayer dielectrics (ILD) e.g. by hydrogenated plasma-enhanced chemical vapor deposition. In this work, we applied bottom-gate oxide engineering wherein N2O plasma treatment on a bottom-gate oxide suppresses the hydrogen diffusion to the amorphous IGZO (a-IGZO), thus minimizing the short-channel effect. The lateral hydrogen diffusion length can be remarkably reduced results show that the use of bottom-gate oxide engineering improved the reliability of the IGZO TFTs.