Generative AI-Based Data Analysis for Evaluation of Variations in XPS Characteristics of MoS2

Due to its self-limiting purge-separated reaction, atomic Layer Deposition (ALD) leads a pathway for precisely thick, conformal, pinhole-free thin films relevant to semiconductors, optoelectronic, and flexible electronic devices. For this research, MoS2 was synthesized on Si/SiO2 substrate by sulfurizing MoO3 films deposited by ALD. The XPS analysis for conformance of MoS2 revealed that there is significant variation in the Mo3d and S2p plots. The study of variation in XPS data using an ML algorithm is envisioned to automate the research process and improve the accuracy of XPS analysis. This research attempts to develop an effective AI module to assist researchers in studying XPS analysis accurately and efficiently.