Analysis of a Gate-Driving Technique for Enhancing the GaN Power Transistors Performance

This paper presents an analysis of a gate-driving technique for enhancing the switching performance of gallium nitride (GaN) power transistors. The technique consists of modifying the Pulse Width Modulated (PWM) signal that is applied to the gate of transistors by using diodes and a totem pole circuit. As purpose of this technique is to control the turn-on and turnoff HEMT GaN transitions and reduce the oscillations caused by high-speed operation without increasing power losses. LTsipice is used for analyzing the gate driving technique by simulations considering models of commercial components. Simulation results show the viability of the proposed, which can reduce the ringing in the GaN transitions without affecting their performance.