A Strain-Based Methodology for the Estimation of Piezoelectric Coefficients

Characterizing piezoelectric coefficients d33 and d31 is crucial in diverse applications. Here, an extensive analysis of the correlation between d33 and d31 in piezoelectric materials, employing strain relationships is presented. Utilizing the fundamental principles of stress and volume conservation, in conjunction with a capacitance voltage profile, d33 is extracted in terms of measured capacitance and the applied bias. This methodology promises advancements in piezoelectric material understanding and engineering across various technological applications. The experimental framework utilized PZT thin film piezoelectric materials of 300 nm thickness with predetermined d33 value of 200 pm/Volts, where measurements were carried out to monitor changes in capacitance under varying poling conditions. This method effectively led to the determination of the d33 coefficient, which was approximately measured at 208 pm/Volt. This approach offers a rapid and efficient method for estimating piezoelectric coefficients, promising advancements in the characterization and application of piezoelectric materials.