A manufacturable 0.18-/spl mu/m SiGe BiCMOS technology for 40-Gb/s optical communication LSIs

A highly manufacturable 0.18-/spl mu/m SiGe BiCMOS technology has been developed for 40-Gb/s optical communication LSIs. A high f/sub T//f/sub max/ of 140/183 GHz in the self-aligned SiGe HBT was achieved with highly reliable yield and device reliability. An optimized process flow and reduced thermal budgets of the SiGe HBT process made it possible to integrate a scaled CMOS without performance degradations. High performance passive elements were also integrated for a large functionality. A 16:1 MUX fabricated in this technology showed a maximum operating clock rate of 54 GHz.