Integration of Ferroelectric Al0.8Sc0.2N on Si (001) Substrate

We evidently present the integration of ferroelectric Al
$_{{0}.{8}}$
Sc
$_{{0}.{2}}\text{N}$
onto a (001)-oriented silicon (Si) substrate. Our AlScN film, having a thickness of 116 nm, shows a remnant polarization (
${P}_{\text {r}}{)}$
exceeding
$124.5~\mu \text{C}$
/cm2 and a coercive voltage of 71.9 V. Our ferroelectric Al
$_{{0}.{8}}$
Sc
$_{{0}.{2}}\text{N}$
on Si demonstrates an endurance performance, surpassing
$1\times 10^{{4}}$
cycles under a stress of 75 V @ 100 kHz. The extrapolation of retention properties reveals that a substantial
$2{P}_{\text {r}}$
over
$200~\mu \text{C}$
/cm2 can be guaranteed for a duration over
$10^{{8}}$
seconds at 300 K. Furthermore, the evaluation of the ratio of breakdown voltage to coercive voltage yields approximately 112% @ 300 K and 131% @ 500 K. These findings mark a critical advancement in the practical implementation of wurtzite ferroelectric field-effect transistor-structural memories and their high-density integration.