A Numerical study on the Effect of Different Hole Transport Layers on CsSn0.5Ge0.5I3 based Perovskite Solar Cells

Perovskite materials are attractive to researchers because of their superior optoelectronic properties. Non-toxic Lead-free perovskites are promising candidates as an alternative to lead perovskites. In this work, our modeled ZnO/CsSn0.5Ge0.5I3/HTL (CFTS, CZTSe, P3HT)/Au is used to investigate the pv parameters of solar cell using SCAPS-1D. The impact of different hole transport layers on perovskite solar cell performance has been particularly examined. CsSn
0.5
Ge
0.5
I
3
is used as an absorber layer where Ge
²⁺
is doped with CsSnI
3
that will improve the stability of the device. Different device parameters including absorber layer thickness, absorber layer doping concentration, and back contact metal work function are optimized in this study. After optimizing device parameters, among several HTL materials, CZTSe showed better performance based on pv parameters where PCE is 26.88%, short circuit current density is 29.24mA/cm
²
, open circuit voltage is 1.0574 volt and fill factor is 86.95%.