A Low-Power Reflective Coding Metasurface with Metal-Oxide-Semiconductor Field-Effect Transistor Integrated

With the continuous advancement of wireless communication, radar technology, and the Internet of Things (IoT), there is a growing demand for high-efficiency systems. Metasurface technology is regarded as a promising solution. Nevertheless, conventional metasurface application systems struggle with high power consumption, necessitating innovative approaches to reduce power consumption. This paper introduces a low-power reflective coding metasurface utilizing a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), to enhance the efficiency of metasurface applications. The key innovation of this study is the integration of MOSFETs into the coding metasurface. Compared to conventional metasurfaces utilizing Positive-Intrinsic-Negative (PIN) diodes, metasurfaces incorporating MOSFETs exhibit significant advantages in reducing power consumption. Ultimately, through theoretical analysis and simulation, we demonstrate the efficacy of the proposed method, confirming that the coding metasurface with MOSFETs can simultaneously reduce power consumption while keeping the performance characteristics that facilitate flexible control of electromagnetic waves.