The Design of a Monolithic Wideband GaN-Based Frequency Doubler for G-Band

A monolithic broadband G-band gallium nitride (GaN) frequency doubler based on a pair of anti-series planar GaN Schottky barried diodes (SBDs) is proposed. Different from traditional hybrid integration mode, terahertz monolithic integrated circuit (TMIC) technology is used to design GaN-based frequency doubler to reduce assignment errors and conversion losses. Considering the problem of heat dissipation under high power drive, the silicon carbide (SiC) substrate with high thermal conductivity is used to reduce heat accumulation and further improve the conversion efficiency. The simulation results show that the efficiency using the novel wideband match method with 500mW input power and bias voltage of -6V can be greater than 10% in the range of
$\mathbf{150}\sim \mathbf{200}\mathbf{GHz}$
. Besides, the output power and conversion efficiency at 180GHz are 19.5% and 97.94mW, respectively.