Vertical Mos2Field-Effect Transistor via Chemical Vapor Deposition

In this study, we employed the chemical vapor deposition (CVD) method to grow large-area multilayer MoS2 films and fabricated both horizontal MoS2 field-effect transistors (FETs) and MoS2 vertical FETs (VFETs). We conducted a detailed investigation of their electrical characteristics. Initially, high-quality MoS2 films were successfully prepared by altering the CVD growth conditions and utilizing the NaCl-assisted growth method. Subsequently, we fabricated horizontal and vertical MoS2 field-effect transistors using wet etching and ultraviolet lithography. Electrical testing results demonstrated that MoS2 VFETs grown via CVD exhibited greater carrier mobility, lower power consumption, and smaller source-drain spacing compared to their horizontal counterparts. By adjusting the gate voltage, we achieved current control in MoS2 VFETs. This research provides both theoretical and experimental foundations for the fabrication of CVD-grown MoS2 in vertical field-effect transistors, offering insights for future research and development in two-dimensional material electronic devices.