Simulation of DNTT/Pentacene-Based Field Effect Transistor (OFET) and Optimization

This paper explains the behavior of Bottom Gate Top Contact Organic Field Effect Transistor (OFET) utilizing different materials gold (Au), Aluminum (Al), and Copper Cu as the source and drain electrodes and Al, ITO (Indium Tin Oxide), and highly doped Si as gate electrodes. In addition to electrode materials, here also focused on Pentacene and DNTT(Dinaphthothienothiophene) as semiconductor layers. Our results demonstrate the importance of proper device design, and material selection for achieving high-performance OFETs. Here the resultant shows the use of different sourcedrain electrodes showing similar VGS ID characteristics but the gate electrode affects the device characteristics. The highly doped Si gate electrode is showing improvement in device performance over the other two gate electrodes. We also observed the effect of organic materials on device performance. The DNTT-based device shows high carrier mobility over the Pentacene. Moreover, the effect of thickness is also covered in this manuscript by selecting pentacene as a semiconducting material and observing the small variation in the graph by considering the thickness of 20 to 50 nm with 10 nm increments. The insights gained from this study contribute to the advancement of OFET technology and provide a foundation for further research in organic electronics.