Modeling and Analysis of the Functioning of the Sensitive Element of a Capacitive Microaccelerometer Based on the Microstructure of Silicon Carbide(Sic) and Silicon(Si)

A comb-type capacitive accelerometer based on the microstructure of silicon carbide (SiC) and silicon (Si) is studied by the finite element method. The deformation of the movable mass during accelerations with different temperatures from room temperature to 100°C was studied. The maximum deformation changes of the movable mass (SiC) due to temperature changes is greater than the movable mass (Si). This means that Si accelerometer has more stabilized due to the temperature change than SiC. The maximum residual stress occurs in the moving mass (SiC) due to temperature changes. According to the results, the resonant frequency of the movable mass (SiC) is higher than the movable mass (Si). This means that it cannot only effectively avoid structural resonance that may cause structural damage, but also extend the operating frequency range of the accelerometer. The article shows the characteristics of the two materials and which one is better suited for different conditions.