LNA IC Development for LTE Bands Based on Bulk CMOS 180nm Digital Library

The article discusses the process of developing an analog cell of a low-noise amplifier for operation as part of an LTE band transceiver for an Internet of Things system. The CMOS 180nm digital process, which requires adaptation to work with RF blocks, has been selected as the basic technology. The main aspects of the adaptation and optimization of the library are described in this publication. The developed A-class low-noise amplifier is built in three stages with linear gain up to 25 dB at 1.7 dB of its own noise and a VSWR level of no more than approximately 1.22. The 1 dB compression point is 6.7 dBm.