Magnetooptical study of Mn ions implanted in Ge

The effect of ion-implanted manganese impurities in germanium is investigated by means of Kerr effect rotation. After annealing, a magnetic cycle with a coercive field close to 3000 Oe is observed at about 10 K. The hysteresis disappears just below room temperature. The magnetic analysis, supported by structural characterization, suggests that particles rich in Mn are formed within the Ge matrix during implantation.