A Study on Device Properties of High Electron Mobility Transistors

Electrical characteristics of Field Effect Transistors depend upon its mechanical structure of the device. It depends upon the dimension of the electrodes along with the electrical voltages applied to the electrodes. The electrical field generated in the device also depends upon the properties of the dielectric material used. High Electron Mobility Transistor (HEMT) is a special type of device. In this study, the properties of HEMT will be discussed. In HEMT, the mobility of electrons is enhanced with the help of heterojunction structure by trapping electron in the form of 2D Electron Gas with very high conductivity. The electrical properties of HEMT have been studied here by altering their physical dimensions, changing the doping concentration by replacing a suitable material to form proper heterojunction interface.