Electrostatic Performance Enhanced in a Dielectric Pocket Junctionless Gate All around MOSFET

The study investigates the characteristics of a Dielectric Pocket Junctionless Gate All Around (DP-JGAA) MOSFET. It analyses key electrostatic parameters, such as the relationship between drain current with gate voltage, drain current with drain voltage, transconductance, and sub-threshold slope. The DP-JGAA MOSFET exhibits a notably lower drain current compared to the Junctionless Gate All Around (JGAA) MOSFET. The paper also establishes that the ION /I
OFF
current ratio is significantly higher for the DP-JGAA MOSFET than for the JGAA MOSFET. The I
ON
/I
OFF
current ratio of the device DE2 is 99% higher than DE1, 37% higher than DE3, 79% higher than DE4, 51% higher than DE5, 18% higher than DE6, and 7% higher than DE7. As a result, the DP-JGAA MOSFET emerges as a highly suitable choice for digital applications.