Recessed-Source/Drain Junctionless GAA MOSFETs and their Sensitivity to Temperature: A Machine learning based Analysis

This article compares the performance of Recessed
-Source/Drain
Junction less Gate All Around (Re
-S/D-JL-GAA
) MOSFETs to Junction less Gate All Around (JL-GAA) MOSFETs and analyses the effects of temperature variations on analogue parameters and Hot-Carrier Injection (HCI) degradation, additionally a Machine Learning (ML) base technique is introduce to find alternative results based on the TCAD simulations which leads to improved performance, reduced development time, and cost savings in the semiconductor industry. The study reveals that temperature differences have minimal impact on analog characteristics. Simulation results show that Re-
S/D-JL-GAA
shows better switching characteristics as compared with JL-GAA MOSFET, makes it a batter choice for analog circuits having a wide range of temperature.