Experimental Study on THz-FSS Structures using SIW Technology

This paper explains the design challenges of Substrate-integrated waveguide techniques at the THz frequency regime. A traditional Gridded square GS-FSS unit cell is studied in the THz range and selectivity improvement is achieved using the SIW concept. The unit cell element is designed on a Silicon substrate with a dielectric constant of 11.9 and a loss tangent of 0.0006. The square element and the grids are formed of gold with an electrical conductivity of 4.561e+07 S/m. Compared to the traditional GSS, the SIW FSS unit cell provides better transmission and reflection band selectivity. The vias are formed in alignment with the design rules to reduce leakage and spurious radiation.