Characterizing the Electrical Properties of (002)-Orientated Aluminum-Nitride Films Synthesized Directly on Single Crystal (100) Si by Reactive Sputtering

This study reports electrical characteristics of highly crystalline Aluminum Nitride (AlN) films synthesized directly on Si (100) substrate. The X-ray diffraction revealed a fully textured oriented in the (002) for
$1\ \mu \mathrm{m}$
thick AlN films deposited by pulsed DC sputtering. The sweep frequency analysis (C-f) reveals that the capacitance is almost constant when increasing the frequency, resulting in a low density of trapped charges in the AlN/Si (100) interface. The dielectric permittivity was determined to be 10.3, accounting for the higher effective electrodes area due to the fringing field. The capacitance in voltage sweep (C-V) measurements for top electrodes with different diameters from 200 to
$800\ \mu \mathrm{m}$
determined the effective width of the electric field
$(\delta)$
to be
$7.1\ \mu \mathrm{m}$
. The I-V measurements show a low leakage current on the order of 10
^–11
A/cm
²
.