CHARM High-Energy Ions for Microelectronics Reliability Assurance (CHIMERA)

We present the progress related to CERN’s capacity of delivering highly penetrating, high-linear energy transfer (LET) heavy ions for radiation effect testing of electronic components within the CHARM High-energy Ions for Micro Electronics Reliability Assurance (CHIMERA) project. Profiting from the existing accelerator infrastructure, Monte Carlo simulations, and a 300-
$\mu $
m-thick silicon diode, we highlight the beam characterization capabilities and a summary of the beam properties. Finally, we present the comparison of the static random access memories (SRAMs) single event effect (SEE) cross section measurements with respect to other heavy ion facilities.