Total Ionizing Dose Effects on a CDTI-Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges

Total ionizing dose (TID) effects are explored in a fully depleted n-type CCD-on-CMOS based on capacitive deep trench isolation (CDTI). The root cause of the observed degradation on full well charge (FWC), charge transfer efficiency (CTE), and dark current is investigated by discriminating the role of interface states and oxide traps. Biasing conditions on irradiation and long-term annealing are explored to provide more elements of comparison with the state of the art of TID effects on modern CMOS devices.