High-Endurance MoS2 FeFET with Operating Voltage Fess Than IV for eNVM in Scaled CMOS Technologies

For the first time, we demonstrate a transition metal dichalcogenide (TMD) Ferroelectric Field-Effect Transistor (FeFET) with ultra-high endurance (>10
¹²
measured) and retention time exceeding 10 years. The devices consist of an ultrathin Hf-Zr-based (HZO) ferroelectric deposited by ALD on a stack of AlO
x
/MoS
2
with process temperature <250°C. By using a 2.5nm HZO layer and a monolayer (1L) MoS
2
, a record-low operating voltage < 1V is reported thanks to excellent gate control. The device fabrication is compatible with Back-End-of-Line (BEoL) processes in advanced CMOS technologies. Array-level projections show that a sufficient memory window is maintained at a supply voltage (V
DD
) of IV. This device has promise for high-density memory embedded in scaled CMOS technology nodes.