Comprehensive Understanding of Flicker Noise in Advanced FinFET Technology: from Noise Sources Separation to Physical-based Modeling

In this paper, a new physical-based model for flicker noise in advanced FinFET technology is proposed based on separation of intertwined noise sources. The proposed separation method can well clarify the sources of flicker noise, enabling the modeling of different components independently. The accuracy of this model is validated by the full-scale bias and device size dependencies of flicker noise, as well as its variations. It is observed that ignoring noise sources other than oxide traps can result in an underestimation of approximately 60% under operating condition. By introducing the equivalent circuit for simulation, the new model is readily to be used with commercial simulators for circuit-level analysis.