Comparative Advantages of 2T-nC FeRAM in Empowering High Density 3D Ferroelectric Capacitor Memory

In this work, we study ferroelectric capacitor memories and demonstrate comparative advantages of 2T-nC (Two transistors-n metal-ferroelectric-metal (MFM) capacitors) in scalability, reliability, and feasibility of dense 3D integration and operation. We show that: i) the sensing and scalability issues of conventional 1T-1C FeRAM rooted in its charge-based sensing; ii) 1T-1C FeMFET suffers from the poor reliability and scaling challenges; iii) the 2T-nC structure can be exploited to address their issues in scalability, density and reliability; iv) through comprehensive experimental and theoretical studies, the design space of 2T-nC devices is explored; v) the integration and operation of 2T-nC FeRAM arrays in 2D and 3D configurations is investigated, demonstrating their potential for improved density and operation.