Variability of Trap-induced Mobility Fluctuations in Nanoscale Bulk and FD-SOI MOSFETs

Low frequency noise (LFN) and random telegraph noise (RTN) are statistically analyzed for nanoscale MOSFETs issued from 40 nm Bulk and 28 nm FD-SOI ST Microelectronics CMOS technologies. We demonstrate that the mean amplitudes of RTN signals follow the carrier number fluctuations (CNF) model with the added correlated mobility fluctuations (CMF) contribution, with the same sensitivity as 1/f noise for the latter. A new methodology to directly extract both CNF and CMF variability contributions, without analyzing each measurement separately, is proposed, through a compact model that can also be used in circuit simulations. Finally, a CMOS inverter variability-aware simulation reveals the important contribution of trap-induced mobility fluctuations to the total static and noise mismatch.